PART |
Description |
Maker |
IXBH6N170 IXBT6N170 |
High Voltage, High Gain BIMOSFET?/a> Monolithic Bipolar MOS Transistor High Voltage, High Gain BIMOSFET⑩ Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
IXBT24N170 |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
IXBH12N300 |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
ECN30601SP ECN30601SPR ECN30601SPV ECN30601 |
HIGH-VOLTAGE MONOLITHIC IC 高压单片集成电路
|
Hitachi,Ltd. Hitachi Semiconductor
|
ECN2112 |
(ECN2102 / ECN2112) HIGH-VOLTAGE MONOLITHIC IC
|
Hitachi Semiconductor
|
TPD4113K |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
TPD4113AK |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
TPD4105AK |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
LT3651-4.2 |
Monolithic 4A High Voltage Li-Ion Battery Charger
|
Linear Technology Corporation
|
LT3512 |
Monolithic High Voltage Isolated Flyback Converter
|
Linear Technology
|
NCP105006 |
Monolithic High Voltage Gated Oscillator Power Switching Regulator
|
ON Semiconductor
|
IXBH15N160 IXBH15N140 |
From old datasheet system High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS[IXYS Corporation]
|